English
Language : 

2N5737 Datasheet, PDF (1/3 Pages) Inchange Semiconductor Company Limited – isc Silicon PNP Power Transistors
SavantIC Semiconductor
Silicon PNP Power Transistors
Product Specification
2N5737 2N5738
DESCRIPTION
·With TO-3 package
·Low collector saturation voltage
APPLICATIONS
·For general–purpose switching
and power amplifier applications.
PINNING
PIN
1
2
3
DESCRIPTION
Base
Emitter
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
2N5737
2N5738
VCEO
Collector-emitter voltage
2N5737
2N5738
VEBO
Emitter-base voltage
IC
Collector current
ICM
Collector current-peak
IB
Base current
PC
Collector power dissipation
Tj
Junction temperature
Tstg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=100
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal resistance junction to case
VALUE
-60
-100
-60
-100
-5
-10
-20
-4
50
150
-65~200
UNIT
V
V
V
A
A
A
W
VALUE
1.17
UNIT
/W