2N5671 Datasheet, PDF (1/3 Pages) Mospec Semiconductor – POWER TRANSISTORS(30A,140W)

SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2N5671 2N5672
DESCRIPTION
·With TO-3 package
·High current ,high speed
APPLICATIONS
·Intended for high current and fast
switching industrial applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Emitter
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
2N5671
2N5672
VCEO
Collector-emitter voltage
2N5671
2N5672
VEBO
IC
IB
PD
Tj
Tstg
Emitter-base voltage
Collector current
Base current
Total Power Dissipation
Junction temperature
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal resistance junction to case
VALUE
120
150
90
120
7
30
10
140
200
-65~200
UNIT
V
V
V
A
A
W
VALUE
1.25
UNIT
/W