2N5664 Datasheet, PDF (1/3 Pages) Microsemi Corporation – NPN POWER SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/455

SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2N5664 2N5665
DESCRIPTION
·With TO-66 package
·High breakdown voltage
APPLICATIONS
·High speed switching and linear amplifier
·High-voltage operational amplifiers
·Switching regulators ,converters
·Deflection stages and high fidelity amplifers
PINNING (See Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-66) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
2N5664
2N5665
VCEO
Collector-emitter voltage
2N5664
2N5665
VEBO
IC
IB
PT
Tj
Tstg
Emitter-base voltage
Collector current
Base current
Total power dissipation
Junction temperature
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-C
Thermal resistance junction to case
VALUE
250
400
200
300
6
5.0
1.0
52.5
200
-65~200
UNIT
V
V
V
A
A
W
MAX
5.0
UNIT
/W