2N5660 Datasheet, PDF (1/3 Pages) Microsemi Corporation – NPN POWER SILICON TRANSISTOR

SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2N5660 2N5661
DESCRIPTION
·With TO-66 package
·High breakdown voltage
APPLICATIONS
·High speed switching and linear amplifier
·High-voltage operational amplifiers
·Switching regulators ,converters
·Deflection stages and high fidelity amplifers
PINNING (See Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-66) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
2N5660
2N5661
VCEO
Collector-emitter voltage
2N5660
2N5661
VEBO
Emitter-base voltage
IC
Collector current
IB
Base current
PT
Total power dissipation
Tj
Junction temperature
Tstg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=100
Ta=25
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-C
Thermal resistance junction to case
VALUE
250
400
200
300
6
2.0
0.5
20
2
200
-65~200
UNIT
V
V
V
A
A
W
MAX
5.0
UNIT
/W