2N5632 Datasheet, PDF (1/3 Pages) Central Semiconductor Corp – SILICON POWER TRANSISTOR

SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2N5632 2N5633 2N5634
DESCRIPTION
·With TO-3 package
·Low collector saturation voltage
·High DC current gain
APPLICATIONS
·For general-purpose power amplifier
and switching applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Emitter
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
2N5632
VCBO
Collector-base voltage
2N5633
2N5634
2N5632
VCEO
Collector-emitter voltage 2N5633
2N5634
VEBO
IC
PD
Tj
Tstg
Emitter-base voltage
Collector current
Total Power Dissipation
Junction temperature
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal resistance junction to case
VALUE
100
120
140
100
120
140
7
10
150
150
-65~200
UNIT
V
V
V
A
W
VALUE
1.1
UNIT
/W