2N5631 Datasheet, PDF (1/3 Pages) ON Semiconductor – POWER TRANSISTORS COMPLEMENTARY SILICON

SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2N5631
DESCRIPTION
·With TO-3 package
·Complement to type 2N6031
·High collector-emitter sustaining voltage
·High DC current gain@I_C=8A
·Low collector saturation voltage
APPLICATIONS
·For high power audio amplifier and
high voltage switching regulator
circuits applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Emitter
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
IC
Collector current
ICM
Collector current-peak
IB
Base current
PD
Total Power Dissipation
Tj
Junction temperature
Tstg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
VALUE
140
140
7
16
20
5.0
200
200
-65~200
UNIT
V
V
V
A
A
A
W
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal resistance junction to case
VALUE
0.875
UNIT
/W