2N5597 Datasheet, PDF (1/3 Pages) Seme LAB – Bipolar PNP Device in a Hermetically sealed TO66 Metal Package

SavantIC Semiconductor
Silicon PNP Power Transistors
Product Specification
2N5597 2N5599 2N5601 2N5603
DESCRIPTION
·With TO-66 package
·Excellent safe operating area
·Low collector saturation voltage
APPLICATIONS
·For high frequency power amplifier ;
audio power amplifier and drivers.
PINNING(see Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-66) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
CONDITIONS
2N5597
VCBO
Collector-base voltage
2N5599/5601 Open emitter
2N5603
2N5597
VCEO
Collector-emitter voltage 2N5599/5601 Open base
2N5603
VEBO
IC
PD
Tj
Tstg
Emitter-base voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature
Open collector
TC=25
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal resistance junction to case
VALUE
-80
-100
-120
-60
-80
-100
-5
-2
20
150
-65~150
UNIT
V
V
V
A
W
VALUE
4.37
UNIT
/W