2N3585 Datasheet, PDF (1/4 Pages) Microsemi Corporation – 5 Amp, 500V, High Voltage NPN Silicon Power Transistors

SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2N3585
DESCRIPTION
·With TO-66 package
·Continuous collector current-I_C=2A
·Power dissipation -PD=35W @T_C=25
·V_CE(SAT)=0.75V(Max)@I_C=1A;I_B=0.125A
APPLICATIONS
·High speed switching and linear amplification
·High-voltage operational amplifiers
·Switching regulators ,converters
·Deflection stages and high fidelity amplifers
PINNING (See Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-66) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
IC
Emitter-base voltage
Collector current
ICM
Collector current-Peak
IB
Base current
PT
Total power dissipation
Tj
Junction temperature
Tstg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-C
Thermal resistance junction to case
VALUE
500
300
6
2
5
1
35
200
-65~200
UNIT
V
V
V
A
A
A
W
MAX
5.0
UNIT
/W