2N3584 Datasheet, PDF (1/3 Pages) Microsemi Corporation – 5 Amp, 375V, High Voltage NPN Silicon Power Transistors

SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2N3584
DESCRIPTION
·With TO-66 package
·Continuous collector current-I_C=2A
·Power dissipation -P_D=35W @T_C=25
·V_CE(SAT)=0.75V(Max)@I_C=1A;I_B=0.125A
APPLICATIONS
·High speed switching and linear amplification
·High-voltage operational amplifiers
·Switching regulators ,converters
·Deflection stages and high fidelity amplifers
PINNING (See Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-66) and symbol
ABSOLUTE MAXIMUM RATINGS(Ta=25 )
SYMBOL
PARAMETER
VCBO
VCEO
VEBO
IC
ICM
IB
PT
Tj
T_stg
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-Peak
Base current
Total power dissipation
Junction temperature
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{(th) jc}
Thermal resistance junction to case
VALUE
375
250
6
2
5
1
35
200
-65~200
UNIT
V
V
V
A
A
A
W
MAX
5.0
UNIT
/W