2N3226 Datasheet, PDF (1/3 Pages) Inchange Semiconductor Company Limited – Silicon NPN Power Transistors

SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2N3226
DESCRIPTION
·With TO-3 package
·Excellent safe operating area
·Low collector saturation voltage
APPLICATIONS
·For power amplifier and switching
circuits applications
PINNING
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
ABSOLUTE MAXIMUM RATINGS (Ta=25 )
SYMBOL
PARAMETER
VCBO
VCEO
VEBO
IC
PD
Tj
T_stg
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{(th) jc}
Thermal resistance junction to case
VALUE
35
35
5
5
75
150
-65~200
UNIT
V
V
V
A
W
VALUE
1.17
UNIT
/W