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| 2N3055 Datasheet, PDF (1/4 Pages) Mospec Semiconductor – POWER TRANSISTORS(15A,50V,115W) | |||
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SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2N3055
DESCRIPTION
·With TO-3 package
·Complement to type MJ2955
·DC Current Gain -hFE = 20â70 @ IC = 4 Adc
·CollectorâEmitter Saturation Voltage -
VCE(sat) = 1.1 Vdc (Max) @ IC = 4 Adc
·Excellent Safe Operating Area
APPLICATIONS
·Designed for generalâpurpose switching
and amplifier applications.
PINNING
PIN
1
2
3
DESCRIPTION
Base
Emitter
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
VALUE
100
60
7
15
7
115
150
-65~200
UNIT
V
V
V
A
A
W
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal resistance junction to case
VALUE
1.52
UNIT
/W
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