LV51142T Datasheet, PDF (5/13 Pages) Sanyo Semicon Device – CMOS IC 1-Cell Lithium-Ion Battery Protection IC

LV51142T
Continued from preceding page.
• Current consumption on operation and shutdown --- [Circuit 4]
Set V1 = 3.5V and V2 = 0V on normal condition. IDD shows current consumption on operation Iopr.
Set V1 = V2 = 1.8V on over-discharge condition. IDD shows current consumption on shutdown Isdn.
• Co : Pch ON resistance, Co : Nch ON resistance --- [Circuit 5]
Set V1 = 3.5V, V2 = 0V and V3 = 3.0V. (V1-V3)/|ICo| is Pch ON resistance Rcop.
Set V1 = 4.6V, V2 = 0V and V3 = 0.5V. V3/|ICo| is Nch ON resistance Rcon.
• Do : Pch ON resistance, Do : Nch ON resistance --- [Circuit 5]
Set V1 = 3.5V, V2 = 0V and V4 = 3.0V. (V1-V4)/|IDo| is Pch ON resistance Rdop.
Set V1 = V2 = 1.8V and V4 = 0.5V. V4/|IDo| is Nch ON resistance Rdon.
• Discharge over-current release resistance --- [Circuit 5]
Set V1 = 3.5V, V2 = 0V at first. And then, set V2 = 1.0V. V2/|IVM| is discharge over-current release resistance Rdwn.
• Over-charge detection delay time, Release delay time 2 --- [Circuit 6]
Set V2 = 0V. Increase V1 from the voltage VC-0.2V to VC+0.2V rapidly within 10μs. Over-charge detection delay time
tc is the time needed for VCO to go "Low" just after the change of V1.
Next, set V2 = 1V and decrease V1 from VC+0.2V to VC-0.2V rapidly within 10μs. Over-charge release delay time trel
2 is the time needed for VCO to go "High" just after the change of V1.
• Over-discharge detection delay time, Release delay time 1 --- [Circuit 6]
Set V2 = 0V. Decrease V1 from the voltage Vdc+0.2V to Vdc-0.2V rapidly within 10μs. Over-discharge detection
delay time tdc is the time needed for VDO to go "Low" just after the change of V1.
Next, set V2 = -1V and increase V1 from Vdc-0.2V to Vdc+0.2V rapidly within 10μs. Release delay time 1 trel1 in case
of over-discharge is the time needed for VDO to go "High" just after the change of V1.
• Charge over-current detection delay time, Release delay time 1 --- [Circuit 6]
Set V1 = 3.0V and V2 = 0V. Decrease V2 from 0V to -1V rapidly within 10μs. Charge over-current delay time tic is the
time needed for VCO to go "Low" just after the change of V2.
Next, increase V2 from -1V to 0V rapidly within 10μs. Release delay time 1 trel1 in case of charge over-current is the
time needed for VCO to go "High" just after the change of V2.
• Discharge over-current detection delay time, Release delay time 1 --- [Circuit 6]
Set V1 = 3.0V and V2 = 0V. Increase V2 from 0V to 1V rapidly within 10μs. Discharge over-current delay time tidc is
the time needed for VDO to go "Low" just after the change of V2.
Next, decrease V2 from 1V to 0V rapidly within 10μs. Release delay time 1 trel1 in case of discharge over-current is the
time needed for VDO to go "High" just after the change of V2.
• Load short-circuiting detection delay time, Release delay time 1 --- [Circuit 6]
Set V1 = 3.0V and V2 = 0V. Increase V2 from 0V to 3.0V rapidly within 10μs. Load short-circuiting detection delay
time tshort is the time needed for VDO to go "Low" just after the change of V2.
Next, decrease V2 from 3.0V to 0V rapidly within 10μs. Release delay time 1 trel1 in case of load short-circuiting is the
time needed for VDO to go "High" just after the change of V2.
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