EFC4606 Datasheet, PDF (5/6 Pages) Sanyo Semicon Device – N-Channel Silicon MOSFET General-Purpose Switching Device Applications

EFC4606
10
VSS=10V
7
5
3
2
⏐yfs⏐ -- IS
25^°C
Ta=--25^°C
75^°C
1.0
0.1
1000
7
5
3
2
100
7
5
3
2
23
5 7 _1.0
23
Source Current, IS -- A
SW Time -- IS
5 7 ₁₀
IT13592
VSS=10V
VGS=4.5A
td(off)
tf
tr
td(on)
10
0.01 ^{2 3 5 7} 0.1 ^{2 3 5 7} 1.0
Source Current, IS -- A
4.5
VSS=10V
VGS -- Qg
4.0 IS=6A
23
5 7 ₁₀
IT13810
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
0 1 2 3 4 5 6 7 8 9 10 11 12 13
Total Gate Charge, Qg -- nC
IT13811
PT -- Ta
1.8
When mounted on ceramic substrate
1.6
(5000mm²âœ•0.8mm)
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0
20
40
60
80 100 120 140 160
Ambient Temperature, Ta -- °C
IT13595
2
10 ^VGS=0V
7
5
3
2
IS -- VF(S-S)
1.0
7
5
3
2
0.1
7
5
3
2
0.01
7
5
3
2
0.001
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Forward Source-to-Source Voltage, VF(S-S) -- V IT13963
Ciss, Coss, Crss -- VSS
3
f=1MHz
2
1000
7
5
Ciss
3
Coss
2
Crss
100
7
0 1 2 3 4 5 6 7 8 9 10
Source-to-Source Voltage, VSS -- V IT13861
ASO
2
100
7
ISP=60A
5
3
2
PW≤100μs
1m1s00^μs
10
7
5
3
2
1.0
7
5
IS=6A
Operation in this area
10ms
DC _{op1e0r0amtiosn}
3
2
is limited by RSS(on).
0.1
7
5
Ta=25°C
3 _{Single pulse}
2
0.01
When mounted on ceramic substrate (5000mm²âœ•0.8mm)
0.01 ^{2 3 5 7} 0.1 ^{2 3 5 7} 1.0 ^{2 3 5 7} 10 ^{2 3 5}
Source-to-Source Voltage, VSS -- V IT13594
No. A1177-5/6