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EFC4601R Datasheet, PDF (5/6 Pages) Sanyo Semicon Device – N-Channel Silicon MOSFET General-Purpose Switching Device Applications
EFC4601R
⏐yfs⏐ -- IS
2
VSS=10V
10
7
25°C
5
Ta=--25°C
75°C
3
2
1.0
0.1
2
1000
7
5
3
2
100
7
5
3
2
23
5 7 1.0
23
Source Current, IS -- A
SW Time -- IS
5 7 10
IT13851
VSS=10V
VGS=4.5A
td(off)
tf
tr
td(on)
10
0.01 2 3 5 7 0.1 2 3 5 7 1.0
Source Current, IS -- A
4.5
VSS=10V
VGS -- Qg
4.0 IS=6A
23
5 7 10
IT13960
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
0 1 2 3 4 5 6 7 8 9 10
Total Gate Charge, Qg -- nC
IT13962
PT -- Ta
1.8
When mounted on ceramic substrate
1.6
(5000mm2✕0.8mm)
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0
20
40
60
80 100 120 140 160
Ambient Temperature, Ta -- °C
IT13863
2
10 VGS=0V
7
5
3
2
IS -- VF(S-S)
1.0
7
5
3
2
0.1
7
5
3
2
0.01
7
5
3
2
0.001
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Forward Source-to-Source Voltage, VF(S-S) -- V IT13852
Ciss, Coss, Crss -- VSS
2
f=1MHz
1000
7
5
Ciss
3
2
Coss
100
7
5
Crss
3
2
10
0
5
10
15
20
25
Source-to-Source Voltage, VSS -- V IT13961
ASO
2
100
7
ISP=60A
5
3
PW≤10μs
100μs
2
10
7
IS=6A
5
3
2
1.0
7
5
1ms
10ms
DC op1e0r0amtiosn
3
Operation in this area
2
is limited by RSS(on).
0.1
7
5
Ta=25°C
3 Single pulse
2
0.01
When mounted on ceramic substrate (5000mm2✕0.8mm)
0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 5
Source-to-Source Voltage, VSS -- V IT13862
No. A1262-5/6