TIG111GMH Datasheet, PDF (4/5 Pages) Sanyo Semicon Device – High Power High Speed Switching Applications

TIG111GMH
toff, td(off), tf -- IC
1000
VCC=300V
VClamp=600V
7
L=200μH
VGE=15V
5
RG=30Ω
toff
3
2
td(off)
tf
ton, td(on), tr -- RG
1000
VCC=300V
7 _VClamp=600V
5 _L=200μH
3
VGE=15V
IC=10A
t on
2
100
7
5
t d(on)
3
tr
2
100
1.0
1000
7
5
3
2
23
5 7 ₁₀
23
Collector Current, IC -- A
ton, td(on), tr -- IC
5 7 ₁₀₀
IT16409
VCC=300V
VClamp=600V
L=200μH
VGE=15V
ton
RG=30Ω
100
7
5
td(on)
3
tr
2
10
1.0
23
5 7 ₁₀
23
Collector Current, IC -- A
15
VCC=300V
VGE -- Qg
IC=10A
12 ^VGE=15V
5 7 ₁₀₀
IT16411
10
1.0
10000
7
5
3
2
1000
7
5
3
2
100
7
5
3
2
10
7
5
3
2
1.0
0
60
55
50
2 3 5 7 ₁₀ 2 3 5 7 ₁₀₀ 2 3
Gate Resistance, RG -- Ω
Cies, Coes, Cres -- VCE
5 7 ₁₀₀₀
IT16410
f=1MHz
Cies
Coes
Cres
5
10
15
20
25
30
Collector-to-Emitter Voltage, VCE -- V IT16412
PD -- Tc
40
9
30
6
20
3
10
0
0
10
20
30
40
50
60
70
Total Gate Charge, Qg -- nC
IT16413
IC -- Tc
25
21
20
15
10
5
0
0
25
50
75 100 125 150 175 200
Case Temperature, Tc -- °C
IT16600
0
0
20
40
60
80 100 120 140 160
Case Temperature, Tc -- °C
IT16599
Forward Bias A S O
1000
7
5
3
2
100
7
5
3
2
10
7
5
3
2
1.0
7
5
DC _{operation10PTm1m=s} ^5s00μs
3
2
0.1
7
5
3 _Tc=25°C
2 _{Single pulse}
0.01
100ms
1.0 ^{2 3 5 7} 10 ^{2 3 5 7} 100 ^{2 3}
Collector-to-Emitter Voltage, VCE -- V
5 7 ₁₀₀₀
IT16601
No.9014-4/5