ATP613 Datasheet, PDF (4/5 Pages) Sanyo Semicon Device – N-Channel Silicon MOSFET General-Purpose Switching Device Applications

ATP613
10
VDS=200V
9 _ID=5.5A
8
VGS -- Qg
7
6
5
4
3
2
1
0
0
2
4
6
8
10
12
Total Gate Charge, Qg -- nC
PD -- Tc
80
14
16
IT16209
70
60
50
40
30
20
10
0
0
20
40
60
80 100 120 140 160
Case Temperature, Tc -- °C
IT16211
ASO
100
7
5
3
2
IDP=19A (PW≤10μs)
10
7
ID=5.5A
5
3
2
1.0
7
5
Operation in
3
this area is
2
limited by RDS(on).
0.1
7
5
100_μ^1s0μs
DC ^{1o0p0emra1st0iomn1sms}
3
2
Tc=25°C
0.01 ^{Single pulse}
1.0 ^{2 3 5 7} 10 ^{2 3 5 7} 100 ^{2 3}
Drain-to-Source Voltage, VDS -- V
EAS -- Ta
120
5 7 ₁₀₀₀
IT16710
100
80
60
40
20
0
0
25
50
75
100
125
150
175
Ambient Temperature, Ta -- °C
IT16212
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