ATP212_12 Datasheet, PDF (4/7 Pages) Sanyo Semicon Device – General-Purpose Switching Device Applications

ATP212
10
VDS=30V
9 _ID=35A
8
VGS -- Qg
7
6
5
4
3
2
1
0
0
5
10
15
20
25
30
Total Gate Charge, Qg -- nC
PD -- Tc
45
35
40
IT14749
40
35
30
25
20
15
10
5
0
0
20
40
60
80 100 120 140 160
Case Temperature, Tc -- °C
IT14751
ASO
3
2 _IDP=105A
100
7
5 ID=35A
3
2
10
7
5
10ms
100ms
PW≤10μs
100_μs ^10μs
3 _{Operation in this area}
2
is limited by RDS(on).
1.0
7
5
3
2 Tc=25°C
0.1 ^{Single pulse}
0.1 ^{2 3 5 7} 1.0 ^{2 3 5 7} 10 ^{2 3}
Drain-to-Source Voltage, VDS -- V
EAS -- Ta
120
5 7 ₁₀₀
IT14750
100
80
60
40
20
0
0
25
50
75
100
125
150
175
Ambient Temperature, Ta -- °C
IT10478
No. A1507-4/7