72722PM_11 Datasheet, PDF (4/15 Pages) Sanyo Semicon Device – Single-Chip RDS Signal-Processing System LSI

LC72722, 72722M, 72722PM
Specifications
Absolute Maximum Ratings at Ta = 25°C, Vssd = Vssa = 0 V
Parameter
Maximum supply voltage
Maximum input voltage
Maximum output voltage
Maximum output current
Allowable power dissipation
Operating temperature
Storage temperature
Symbol
Conditions
Ratings
Unit
V_DD max
V_IN1 max
V_IN2 max
V_IN3 max
V_O1 max
V_O2 max
V_O3 max
I_O1 max
I_O2 max
I_O3 max
Vddd, Vdda: Vdda ≤ Vddd +0.3 V
CL, DI, CE, SYR, T1, T2, T3, T4, T5, T6, T7, SYNC
XIN
MPXIN, CIN
DO, SYNC, RDS-ID, T3, T4, T5, T6, T7
XOUT
FLOUT
DO, T3, T4, T5, T6, T7
XOUT, FLOUT
SYNC, RDS-ID
LC72722:DIP24S:
–0.3 to +7.0
V
–0.3 to +7.0
V
–0.3 to Vddd +0.3
V
–0.3 to Vdda +0.3
V
–0.3 to +7.0
V
–0.3 to Vddd +0.3
V
–0.3 to Vdda +0.3
V
6.0
mA
3.0
mA
20.0
mA
350
mW
Pd max Ta ≤ 85°C
LC72722M:MFP24S:
150
mW
LC72722PM:MFP24:
175
mW
Topr
–40 to +85
°C
Tstg
–55 to +125
°C
Allowable Operating Ranges at Ta = –40 to +85°C, Vssd = Vssa = 0 V
Parameter
Supply voltage
Input high-level voltage
Input low-level voltage
Output voltage
Input amplitude
Guaranteed crystal oscillator frequencies
Crystal oscillator frequency deviation
Data setup time
Data hold time
Clock low-level time
Clock high-level time
CE wait time
CE setup time
CE hold time
CE high-level time
Data latch change time
Data output time
Symbol
V_DD1
V_DD2
V_IH
V_IL
V_O
V_IN1
V_IN2
V_XIN
Xtal
TXtal
t_SU
t_HD
t_CL
t_CH
t_EL
t_ES
t_EH
t_CE
t_LC
t_DC
t_DH
Conditions
Vddd, Vdda: Vddd = Vdda
Vddd: Serial data hold voltage
CL, DI, CE, SYR, T1, T2
CL, DI, CE, SYR, T1, T2
DO, SYNC, RDS-ID, T3, T4, T5, T6, T7
MPXIN : f = 57 ±2 kHz
MPXIN : 100% modulation composite
XIN
XIN, XOUT : CI ≤ 120 Ω (XS = 0)
XIN, XOUT : CI ≤ 70 Ω (XS = 1)
XIN, XOUT : f_O = 4.322 MHz, 8.664 MHz
DI, CL
DI, CL
CL
CL
CE, CL
CE, CL
CE, CL
CE
min
4.5
2.0
0.7 Vddd
0
100
400
0.75
0.75
0.75
0.75
0.75
0.75
0.75
DO, CL: Differs depending on the value of the
pull-up resistor used.
DO, CE: Differs depending on the value of the
Electrical Characteristics at Ta = –40 to +85°C, Vssd = Vssa = 0 V
Ratings
typ
5.0
4.332
8.664
max
5.5
6.5
0.3 Vddd
6.5
50
1500
±100
20
1.15
Unit
V
V
V
V
V
mVrms
mVrms
mVrms
MHz
MHz
ppm
μs
μs
μs
μs
μs
μs
μs
ms
μs
0.46
μs
0.46
μs
Parameter
Input resistance
Internal feedback resistance
Center frequency
–3 dB bandwidth
Gain
Symbol
Conditions
Rmpxin MPXIN–Vssa : f = 57 kHz
Rcin CIN–Vssa : f = 57 kHz
Rf XIN
fc
FLOUT
BW – 3 dB FLOUT
Gain MPXIN–FLOOUT : f = 57 kHz
min
56.5
2.5
28
Ratings
Unit
typ
max
43
kΩ
100
kΩ
1.0
MΩ
57.0
57.5 kHz
3.0
3.5 kHz
31
34
dB
Continued on next page.
No. 5602-4/15