VEC2812 Datasheet, PDF (3/6 Pages) Sanyo Semicon Device – MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device

Switching Time Test Circuit
[MOSFET]
VEC2812
trr Test Circuit
[SBD]
VIN
4V
0V
VIN
PW=10µs
D.C.≤1%
G
VDD=10V
ID=1A
RL=10Ω
D
VOUT
VEC2812
P.G
50Ω
S
Duty≤10%
50Ω
100Ω
10Ω
10µs
--5V
trr
ID -- VDS
[MOSFET]
2.0
1.6
1.8V
1.5V
1.2
0.8
0.4
VGS=1.0V
0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Drain-to-Source Voltage, VDS -- V IT02901
RDS(on) -- VGS
400
Ta=25°C
350
300
1.0A
250
ID=0.5A
200
150
100
50
0
0
2
4
6
8
10
Gate-to-Source Voltage, VGS -- V IT02985
2.0
VDS=10V
1.8
ID -- VGS
[MOSFET]
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
Gate-to-Source Voltage, VGS -- V IT02902
RDS(on) -- Ta
400
350
300
250
ID=0.5A, ^VGS=2.5V
200
150
ID=1.0A, ^VGS=4.0V
100
50
0
--60 --40 --20 0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C
IT11826
No. A0392-3/6