PCP1202 Datasheet, PDF (3/4 Pages) Sanyo Semicon Device – NPN Epitaxial Planar Silicon Transistor High-Voltage Switching Applications

PCP1202
IC -- VBE
2.5
hFE -- IC
1000
VCE=5V
7
VCE=5V
5 _Ta=75°C
2.0
25°C
3
--25°C
2
1.5
100
1.0
7
5
3
0.5
2
0
0
0.2
0.4
0.6
0.8
1.0
1.2
Base-to-Emitter Voltage, VBE -- V IT13544
fT -- IC
3
VCE=10V
2
10
0.01
7
5
23
5 7 _0.1
2 3 5 7 _1.0
Collector Current, IC -- A
Cob -- VCB
23 5
IT13545
f=1MHz
100
7
5
3
2
10
0.01
7
3
2
23
5 7 _0.1
23
Collector Current, IC -- A
VCE(sat) -- IC
5 7 _1.0
IT13546
IC / IB=10
0.1
7
5
25^°C
3
Ta=75^°C
2
--25^°C
0.01
0.01
23
5
ICP=3A
3
2.5
2
IC=2A
1.0
7
5
3
2
5 7 _0.1
2 3 5 7 _1.0
Collector Current, IC -- A
ASO
23
IT13548
<10μs
0.1
7
5
3
2 _Tc=25°C
Single pulse
0.01
0.01 ^{2 3 5 70.1 2 3 5 71.0 2 3 5 7} 10 ^{2 3 5 7100 2 3}
Collector-to-Emitter Voltage, VCE -- V IT13550
3
2
10
7
5
3
0.1 ^{2 3 5 7} 1.0 ^{2 3 5 7} 10 ^{2 3 5 7} 100
Collector-to-Base Voltage, VCB -- V IT13547
VBE(sat) -- IC
2
IC / IB=10
1.0
Ta= ^--25°C
7
25°^C
5
75^°C
3
2
0.01
1.6
1.4
1.3
1.2
23
5 7 _0.1
2 3 5 7 _1.0
Collector Current, IC -- A
PC -- Ta
23
IT13549
When mounted on ceramic substrate
(450mm²âœ•0.8mm)
1.0
0.8
0.6
0.4
0.2
0
0
20
40
60
80 100 120 140 160
Ambient Temperature, Ta -- °C
IT13519
No. A1165-3/4