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LV23000M Datasheet, PDF (3/14 Pages) Sanyo Semicon Device – Single-Chip Tuner IC for Radio/Cassette Players
LV23000M
Operating Characteristics at Ta = 25°C, VCC = 5.0 V, VDD = 3.0 V,
in the specified test circuit, using Yamaichi Electronics socket IC51-0362-736
Parameter
Symbol
Conditions
min
[FM Front End Characteristics] : fc = 98 MHz, fm = 1 kHz, 22.5 kHzdev.
3 dB sensitivity
60 dBµV EMF, referenced to a 22.5 kHz dev. output,
3 dB LS –3 dB input
Practical sensitivity
QS For a 30 dB signal-to-noise ratio input
[FM IF Monaural Characteristics] : fc = 10.7 MHz, fm = 1 kHz, 75 kHzdev.
Demodulator output
VO 100 dBµ V, the pin 12 output
210
Signal-to-noise ratio
S/N 100 dBµ V, the pin 12 output
68
Total harmonic distortion (mono)
THD 100 dBµ V, the pin 12 output
3 dB sensitivity
3 dB LS 100 dBµ V, referenced to a 75 kHz dev. output, –3 dB input
IF counter sensitivity
IF-C3 SDC0 = 1, SDC1 = 0, the pin 18 (DO) output
41
Muting attenuation
Mute-Att 100 dBµ V, the pin 12 output
[FM IF Stereo Characteristics] : fc = 10.7 MHz, fm = 1 kHz, L+R = 90%, Pilot = 10%
Separation
SEP 100 dBµ V, L-mod, Pin 12 output/pin 13 output
28
Total harmonic distortion (main)
THD 100 dBµ V, main modulation, the pin 12 output
[AM Characteristics] : fc = 1000 kHz, fm = 1 kHz, 30% mod
Detector output 1
VO1 23 dBµ V, the pin 12 output
20
Detector output 2
VO2 80 dBµ V, the pin 12 output
60
Signal-to-noise ratio 1
S/N1 23 dBµ V, the pin 12 output
1.5
Signal-to-noise ratio 2
S/N2 80 dBµ V, the pin 12 output
47
Total harmonic distortion
THD 80 dBµ V, the pin 12 output
IF counter sensitivity
IF-C The pin 18 (DO) output
16
80 dBµ V, referenced to fm = 1 kHz,
AM low cut
LOW-CUT the pin 12 output when fm = 100 Hz.
5
[Current Drain]
FM tuner block
AM tuner block
PLL block
[PLL Characteristics]
ICCFM In FM mode with no input
20
ICCAM In AM mode with no input
10
IDD fr = 83 MHz, X'tal = 75 kHz, With no input to the tuner block
1
Built-in feedback resistor
Rf XIN
Built-in output resistor
Rd XOUT
Hysteresis
High-level output voltage
Low-level output voltage
High-level input current
Low-level input current
Output leakage current
High-level 3-state off leakage current
Low-level 3-state off leakage current
VHIS
VOH
VOL1
VOL2
VOL2
VOL3
VOL4
IIH1
IIH2
IIH3
IIL1
IIL2
IIL3
IOFF1
IOFF2
IOFFH
IOFFL
CE, CL, DI
PD: IO = –1 mA
PD: IO = 1 mA
BO1, BO2: IO = 1 mA
BO1, BO2: IO = 5 mA
DO: IO = 1 mA
AOUT: IO = 1 mA, AIN = 2.0 V
CE, CL, DI: VI = 6.0 V
XIN: VI = VDD
AIN: VI = 6.0 V
CE, CL, DI: VI = 0 V
XIN: VI = 0 V
AIN: VI = 0 V
AOUT, BO1, BO2: VO = 10 V
DO: VO = 6.0 V
PD: VO = 6.0 V
PD: VO = 0 V
VDD – 1.0
0.16
0.16
Ratings
typ
12
12
330
75
0.3
38
51
68
40
0.5
40
110
20
54
1.2
26
8
30
20
2
8
250
0.1VDD
0.01
0.01
Unit
max
dBµV
EMF
dBµV
EMF
420 mVrms
dB
1.5
%
44 dBµV
61 dBµV
dB
dB
1.5
%
80 mVrms
160 mVrms
dB
dB
3.0
%
36 dBµV
11
dB
40 mA
30 mA
5 mA
MΩ
kΩ
V
V
1.0
V
0.25
V
1.25
V
0.25
V
0.5
V
5.0
µA
0.9
µA
200
nA
5.0
µA
0.9
µA
200
nA
5.0
µA
5.0
µA
200
nA
200
nA
No. 6903-3/14