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FTD2019 Datasheet, PDF (3/4 Pages) Sanyo Semicon Device – Load Switching Applications
FTD2019
100
yfs -- ID
7
5
VDS=10V
3
2
10
7
5
3
2
1.0
7
5
3
Ta=--25°C
25°C
75°C
2
0.1
7
5
3
2
0.01
0.001 2 3 5 70.01 2 3 5 7 0.1 2 3 5 7 1.0
Drain Current, ID – A
1000
SW Time -- ID
7 VDD=10V
5 VGS=4V
3
2
td(off)
100
tf
7
5
tr
2 3 5 7 10
IT00937
3
2
td(on)
10
7
5
3
2
10
7
5
VGS = 0
3
2
IF -- VSD
1.0
7
5
3
2
0.1
7
5
3
2
0.01
7
5
3
2
0.001
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
10000
7
5
Diode Forward Voltage, VSD – V IT00938
Ciss, Coss, Crss -- VDS
f=1MHz
3
2
1000
7
5
Ciss
3
Coss
2
Crss
100
7
5
3
2
1.0
0.1
23
5 7 1.0
23
Drain Current, ID – A
VGS -- Qg
10
VDS=10V
9 ID=5A
8
5 7 10
IT00939
7
6
5
4
3
2
1
0
0 5 10 15 20 25 30 35 40 45 50
Total Gate Charge, Qg – nC
IT00941
PD -- Ta
1.5
Mounted on a ceramic board (1000mm2×0.8mm)
10
0
5
10
15
20
25
30
35
Drain-to-Source Voltage, VDS – V IT00940
ASO
100
7
5
3 IDP=20A
2
<10µs
10
7
5
ID=5A
3
2
1.0
7
5
3 Operation in this
2
1ms
10ms
DC
100ms
operation
area is limited by RDS(on).
0.1
7
5
Ta=
25°C
3
2
Single
1 unit
pulse
0.01 Mounted on a ceramic board (1000mm2×0.8mm)
100µs
0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 5 7 100
Drain-to-Source Voltage, VDS – V IT00942
1.3
1.0
0.8
0.5
1TuotnailtDissipation
0
0
20
40
60
80 100 120 140 160
Ambient Temperature, Ta – °C
IT00943
No.6383-3/4