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FSS802_04 Datasheet, PDF (3/4 Pages) Sanyo Semicon Device – N-Channel Silicon MOSFET General-Purpose Switching Device Applications
FSS802
yfs -- ID
5
VDS=10V
3
2
10
7
5
Ta= --25°C
3
75°C 25°C
2
1.0
7
5
0.1
10000
7
5
3
2
2 3 5 7 1.0
2 3 5 7 10
23
Drain Current, ID -- A
IT04079
Ciss, Coss, Crss -- VDS
f=1MHz
Ciss
1000
7
5
3
2
Coss
Crss
100
0
5
10
15
20
25
Drain-to-Source Voltage, VDS -- V
SW Time -- ID
1000
7 VDD=15V
5 VGS=10V
3
2
td(off)
30
IT07598
100
tf
7
5
tr
3
2
td(on)
10
7
5
3
2
1.0
0.1
3.5
23
5 7 1.0
2 3 5 7 10
Drain Current, ID -- A
PD -- Ta
23
IT04083
IF -- VSD
5
3
2
10
7
5
3
2
1.0
7
5
3
2
0.1
7
5
3
2
0.01
7
5
3
2
0.001
0.2 0.3 0.4 0.5 0.6 0.7 0.8
Diode Forward Voltage, VSD -- V
10
Qg -- VGS
VDS=10V
9 ID=12A
VGS=0
0.9 1.0
IT04080
8
7
6
5
4
3
2
1
0
0
5
10
15
20
25
30
35
Total Gate Charge, Qg -- nC
IT04082
ASO
100
7
5
IDP=52A
≤10µs
3
2 ID=12A
10
7
5
1ms
100m1s0ms
3
2
1.0
7
5
Operation in this
DC opera1t0iosn
3 area is limited by RDS(on).
2
0.1
7
5 Ta=25°C
3
2
0.01
Single pulse
Mounted on a ceramic board (1200mm2!0.8mm)
0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 5
Drain-to-Source Voltage, VDS -- V IT07985
3.0
2.5
2.0
1.5
1.0
0.5
Mounted on a ceramic board (1200mm 2!0.8mm) PW≤10s
0
0
20
40
60
80 100 120 140 160
Ambient Temperature, Ta -- °C
IT04085
No.8044-3/4