EMH1402 Datasheet, PDF (3/4 Pages) Sanyo Semicon Device – N-Channel Silicon MOSFET General-Purpose Switching Device

EMH1402
90
80
ID=1.5A
70
RDS(on) -- VGS
3A
Ta=25°C
60
50
40
30
20
10
0
0
2
4
6
8
10
12
Gate-to-Source Voltage, VGS -- V
yfs -- ID
10
7 ^VDS=10V
5
14
16
IT10423
3
2
1.0
Ta= ^{--25°C75°C}
7
5
25^°C
3
2
0.1
0.01 ^{2 3 5 7} 0.1
2 3 5 7 _1.0
2 3 5 7 ₁₀
Drain Current, ID -- A
IT10425
SW Time -- ID
1000
7
VDD=15V
5
VGS=10V
3
2
100
td(off)
7
5
3
tf
2
td(on)
10
7
tr
5
3
2
0.01 2 3 5 7 0.1 2 3 5 7 1.0
10
VDS=10V
9 _ID=6A
Drain Current, ID -- A
VGS -- Qg
8
23
5 7 10
IT10427
7
6
5
4
3
2
1
0
0
2
4
6
8
10
12
14
16
Total Gate Charge, Qg -- nC
IT10429
RDS(on) -- Ta
90
80
70
60
50
40
30
IDI=D1=.15.A5A, ^V, _{VGGS=S4=.40.V5V}
20
ID=3.0A, ^VGS=10.0V
10
0
--60 --40 --20 0 20 40 60 80 100 120
Ambient Temperature, Ta -- °C
10
7 ^VGS=0V
IS -- VSD
5
140 160
IT10424
3
2
1.0
7
5
3
2
0.1
7
5
3
2
0.01
0.3
3
2
0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
Diode Forward Voltage, VSD -- V IT10426
Ciss, Coss, Crss -- VDS
f=1MHz
1000
7
5
Ciss
3
2
Coss
100
Crss
7
5
0
5
10
15
20
25
30
Drain-to-Source Voltage, VDS -- V IT10428
ASO
5
3 ^IDP=24A
<10µs
2
10
7
5
3
2
1.0
7
5
3
2
ID=6A
Operation in this
area is limited by
RDDCS(oopner)a.tio1n0(0Tma1=s02m5^{°sC1)m1s00µs}
0.1
7
5
3 ^Ta=25°C
2 Single pulse
0.01 ^{Mounted on a ceramic board (1200mm2!0.8mm)}
0.01 ^{2 3 5 7} 0.1 ^{2 3 5 7} 10 ^{2 3 5 7} 100 ^{2 3 5}
Drain-to-Source Voltage, VDS -- V IT10430
No.8723-3/4