CPH6402 Datasheet, PDF (3/4 Pages) Sanyo Semicon Device – Ultrahigh-Speed Switching Applications

CPH6402
RDS(on) - Ta
500
150
ID^=1A,VGS=4V
100
ID^=2A,VGS=10V
50
0
-60 -40 -20 0
20 40 60 80 100 120 140
Ambient Temperature, Ta – ˚C
Ciss,Coss,Crss - VDS
10000
7
f = 1MHz
5
3
2
1000
7
5
3
Ciss
2
Coss
100
7
5
Crss
3
2
10
7
VGS= 0
5
3
2
IF - VSD
1.0
7
5
3
2
0.1
7
5
3
2
0.01
7
5
3
2
0.001
0
0.2
0.4
0.6
0.8
1.0
1.2
Diode Forward Voltage, VSD – V
10
VDS=10V
9 I_D=4A
VGS - Qg
8
7
6
5
4
3
2
1
10
0
5
10
15
20
25
30
Drain-to-Source Voltage, VDS – V
SW Time - ID
2
VDD=15V
VGS=10V
100
7
5
t_d(off)
3
t_f
2
10
tr _td(on)
7
5
3
2
7 _0.1
1.8
23
5 7 _1.0
23
Drain Current, ID – A
PD - Ta
57
0
0
1
23
45
6
7
8
9 10
Total Gate Charge, Qg – nC
ASO
3
2
IDP=16A
10µs 100µs
10
7
5
ID=4A
3
2
1.0
7
5 _{Operation in this area}
3
2
is limited by RDS(on).
1ms
10ms
DC
100ms
operation
0.1
7
5
3 _Ta=25°C
2 1 Pulse
0.01 ^{Mounted on a ceramic board (900mm2×0.8mm)}
0.1 ^{2 3 5 7} 1.0 ^{2 3 5 7} 10
23 5
Drain-to-Source Voltage, VDS – V
1.6
1.4
1.2
1.0
0.8
0.6
0.4
Mounted _{on a ceramic board (900mm 2×0.8mm)}
0.2
0
0
20
40
60
80
100 120 140 160
Ambient Temperature, Ta – ˚C
No.5983-3/4