CPH5863 Datasheet, PDF (3/5 Pages) Sanyo Semicon Device – MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device

CPH5863
Switching Time Test Circuit
[MOSFET]
VIN
4V
0V
VDD=10V
VIN
PW=10µs
D.C.≤1%
ID=1.3A
RL=11.5Ω
D
VOUT
G
trr Test Circuit
[SBD]
Duty≤10%
50Ω
10µs
100Ω
10Ω
P.G
50Ω
CPH5863
S
--5V
trr
ID -- VDS
[MOSFET]
3.0
2.5
2.0
1.5
1.5V
1.0
0.5
0
VGS=1.0V
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Drain-to-Source Voltage, VDS -- V IT06404
RDS(on) -- VGS
250
Ta=25°C
200
1.3A
150
ID=0.7A
100
50
0
0
2
4
6
8
10
Gate-to-Source Voltage, VGS -- V IT06406
yfs -- ID
10
7
VDS=10V
5
3
25^°C
2
Ta= ^{--25°C75°C}
1.0
7
5
3
2
0.1
0.01
23
5 7 _0.1 2 3 5 7 _1.0
Drain Current, ID -- A
23
5 7 ₁₀
IT06408
3.0
VDS=10V
2.5
ID -- VGS
[MOSFET]
2.0
1.5
1.0
0.5
0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
Gate-to-Source Voltage, VGS -- V IT06405
RDS(on) -- Ta
[MOSFET]
250
200
150
100
VVGGS=S2=.54V.0,VI,DI=D0=.71A.3A
50
0
--60 --40 --20 0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C
IT06407
IS -- VSD
[MOSFET]
10
7
VGS=0V
5
3
2
1.0
7
5
3
2
0.1
7
5
3
2
0.01
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
Diode Forward Voltage, VSD -- V IT06409
No. A0465-3/5