CPH5811 Datasheet, PDF (3/6 Pages) Sanyo Semicon Device – DC / DC Converter Applications

CPH5811
Switching Time Test Circuit
[MOSFET]
VIN
4V
0V
VIN
PW=10µs
D.C.≤1%
G
VDD=10V
ID=1.5A
RL=6.67Ω
D
VOUT
CPH5811
P.G
50Ω
S
trr Test Circuit
[SBD]
Duty≤10%
50Ω
100Ω
10Ω
10µs
--5V
trr
ID -- VDS
[MOSFET]
3.0
2.5
2.0
1.5
VGS=1.0V
1.0
0.5
0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Drain-to-Source Voltage, VDS -- V IT03490
RDS(on) -- VGS [MOSFET]
160
Ta=25°C
140
120
100
1.0A
80
1.5A
60 ^ID=0.5A
40
20
0
0
2
4
6
8
10
Gate-to-Source Voltage, VGS -- V IT03492
4.0
VDS=10V
3.5
ID -- VGS
[MOSFET]
3.0
2.5
2.0
1.5
1.0
0.5
0
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Gate-to-Source Voltage, VGS -- V IT03491
RDS(on) -- Ta
[MOSFET]
140
120
100
80
60
IIIDDD===011.5..05AAA, _{,V, VVGGGSS=S==12.48..5V0VV}
40
20
0
--60 --40 --20 0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C
IT03493
No.8234-3/6