CPH5614 Datasheet, PDF (3/4 Pages) Sanyo Semicon Device – N-Channel Silicon MOSFET General-Purpose Switching Device

CPH5614
RDS(on) -- VGS
1000
Ta=25°C
900
ID=0.5A
800
700
600
500
400
300
0 2 4 6 8 10 12 14 16
Gate-to-Source Voltage, VGS -- V
yfs -- ID
5
VDS=10V
3
18 20
IT07447
2
1.0
25^°C
7
5
Ta= ^{--25°C75°C}
3
2
0.1
0.01
7
5
3
2
10
7
5
3
2
23
5 7 _0.1 2 3 5 7 _1.0
Drain Current, ID -- A
SW Time -- ID
23 5
IT07449
td(off)
VDD=50V
VGS=10V
tf
td(on)
tr
1.0
0.1
2
10
VDS=50V
ID=1A
8
3
5 7 _1.0
Drain Current, ID -- A
VGS -- Qg
2
3
IT07451
6
4
2
0
0
1
2
3
4
5
6
7
Total Gate Charge, Qg -- nC
IT07453
RDS(on) -- Ta
1000
900
800
700
600
500
I D=0.I5DA=,0V.5GAS,=V4VGS=10V
400
300
200
--60 --40 --20 0 20 40 60 80 100 120
Ambient Temperature, Ta -- °C
3
2 ^VGS=0
IF -- VSD
140 160
IT07448
1.0
7
5
3
2
0.1
7
5
3
2
0.01
0.3
7
5
3
2
0.4
0.5
0.6
0.7
0.8
0.9
1.0
Diode Forward Voltage, VSD -- V IT07450
Ciss, Coss, Crss -- VDS
f=1MHz
Ciss
100
7
5
3
Coss
2
Crss
10
7
5
0
5
10
15
20
25
30
Drain-to-Source Voltage, VDS -- V IT07452
ASO
7
5
<10µs
3 IDP=4A
2
ID=1A
1.0
7
5
3
2
0.1
7
5
3
1ms ¹⁰⁰_µs
DC _{opera1t0io0nm(sTa1=02m5°sC)}
2
Operation in this
0.01
7
area is limited by RDS(on).
5
3
2
0.001
Ta=25°C
Single pulse
Mounted on a ceramic board (600mm²!0.8mm) 1unit
0.01 ^{2 3 5 7} 0.1 ^{2 3 5 7} 1.0 ^{2 3 5 7} 10 ^{2 3 5 7} 100 ²
Drain-to-Source Voltage, VDS -- V IT08290
No.8119-3/4