CPH3448 Datasheet, PDF (3/4 Pages) Sanyo Semicon Device – N-Channel Silicon MOSFET General-Purpose Switching Device Applications

CPH3448
RDS(on) -- VGS
140
120
0.5A
100
ID=1A
2A
80
60
40
Ta=25°C
RDS(on) -- Ta
140
120
100
80
VGS=1.8V, ^ID=0.5A
60
40
VVGGSS==24.5.V5V, ^I,
D=1.0A
I _D=2.0A
20
0
0 1 2 3 4 5 6 7 8 9 10
Gate-to-Source Voltage, VGS -- V IT14346
| yfs | -- ID
7
VDS=10V
5
3
2
1.0
Ta=
--25^°C
75^°C
7
5
25^°C
3
2
0.1
0.01
5
3
2
23
5 7 _0.1 2 3 5 7 _1.0 2 3 5
Drain Current, ID -- A
SW Time -- ID
IT14348
VDD=15V
VGS=4.5V
100
7
5
td(off)
3
tf
2
td(on)
10
7
tr
5
3
2
0.01
4.5
4.0
23
5 7 0.1 2 3 5 7 1.0
Drain Current, ID -- A
VGS -- Qg
2 3 5 7 10
IT14350
VDS=15V
ID=4A
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
0
1
2
3
4
5
6
Total Gate Charge, Qg -- nC
IT14352
20
0
--60 --40 --20 0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C
IT14347
IS -- VSD
7
5
VGS=0V
3
2
1.0
7
5
3
2
0.1
7
5
3
2
0.01
0
1000
7
5
3
2
0.2
0.4
0.6
0.8
1.0
1.2
Diode Forward Voltage, VSD -- V IT14349
Ciss, Coss, Crss -- VDS
f=1MHz
Ciss
100
7
5
Coss
Crss
3
2
10
0
5
10
15
20
25
30
Drain-to-Source Voltage, VDS -- V IT14351
ASO
3
2 ^{IDP=16A (PW≤10μs)}
10
7
5
ID=4A
100_μs
1ms
3
2
1.0
7
5
3
2
Operation in
is limited by
this aDreCaoperation
RDS(on).
10ms
100ms
(Ta=25_°C)
0.1
7
5
3 Ta=25°C
2 Single pulse
0.01 ^{When mounted on ceramic substrate (900mm2×0.8mm)}
0.1
2 3 5 7 _1.0
2 3 5 7 ₁₀
23 5
Drain-to-Source Voltage, VDS -- V IT15325
No. A1648-3/4