CPH3431 Datasheet, PDF (3/4 Pages) Sanyo Semicon Device – N-Channel Silicon MOSFET General-Purpose Switching Device

CPH3431
yfs -- ID
5
1.0
VDS=10V
7
3
5
2
3
2
1.0
7
0.1
5
3
Ta= ^{--25°C75°C}
7
5
2
25^°C
3
2
IS -- VSD
VGS=0V
0.1
0.01
10000
7
5
3
2
23
5 7 _0.1
23
Drain Current, ID -- A
SW Time -- ID
5 7 _1.0
IT11179
VDD=100V
VGS=10V
1000
7
5
3
2
100
7
5
tf
td _(off)
3
2
td(on)
10
7
5
tr
3
2
1.0
0.001 2 3 5 7 0.01 2 3 5 7 0.1
10
VDS=100V
9 _ID=600mA
Drain Current, ID -- A
VGS -- Qg
23
5 7 1.0
IT09323
8
7
6
5
4
3
2
1
0
0
1
2
3
4
5
6
7
Total Gate Charge, Qg -- nC
IT09325
PD -- Ta
1.2
0.01
0.3
1000
7
5
3
2
0.5
0.7
0.9
1.1
Diode Forward Voltage, VSD -- V IT09322
Ciss, Coss, Crss -- VDS
f=1MHz
Ciss
100
7
5
3
2
Coss
10
7
Crss
5
3
0
50
100
150
200
Drain-to-Source Voltage, VDS -- V IT09324
ASO
5
3 ^IDP=2.4A
<10µs
2
1.0
7
ID=0.6A
5
1ms
3
2
0.1
7
5
3
2
0.01
7
Operation in this
area is limited by RDS(on).
5
3
2
Ta=25°C
Single pulse
0.001 ^{Mounted on a ceramic board (900mm2!0.8mm)}
0.01 ^{2 3 5 70.1 2 3 5 71.0 2 3 5 7} 10 ^{2 3 5 7100 2 3}
Drain-to-Source Voltage, VDS -- V IT09326
1.0
0.8
0.6
0.4
0.2
Mounted _{on a ceramic board (900mm 2!0.8mm)}
0
0
20
40
60
80 100 120 140 160
Ambient Temperature, Ta -- °C
IT09327
No.8252-3/4