ATP214 Datasheet, PDF (3/4 Pages) Sanyo Semicon Device – N-Channel Silicon MOSFET General-Purpose Switching Device Applications

ATP214
RDS(on) -- VGS
20
Tc=25°C
18
Single pulse
ID=10A
16
19A
14
38A
12
10
8
6
4
2
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16
Gate-to-Source Voltage, VGS -- V
3
| yfs | -- ID
2 ^VDS=10V
Single pulse
IT15696
100
7
5
25^°C
3
2
10
Tc=
--25^°C
75^°C
7
5
3
2
1.0
7
5
0.1
1000
7
5
2 3 5 7 _1.0 2 3 5 7 ₁₀ 2 3 5 7 ₁₀₀
Drain Current, ID -- A
SW Time -- ID
IT15698
td(off)
VDD=30V
VGS=10V
3
2
tf
100
7
tr
5
3
td(on)
2
10
0.1
2 3 5 7 _1.0
2 3 5 7 ₁₀
23
Drain Current, ID -- A
10 _VDS=30V
VGS -- Qg
9 ID=75A
5 7 ₁₀₀ 2
IT15700
8
7
6
5
4
3
2
1
0
0 10 20 30 40 50 60 70 80 90 100
Total Gate Charge, Qg -- nC
IT15711
RDS(on) -- Tc
20
Single pulse
18
16
14
12
10
8
6
V GVSVG=S4G=.S04=V.51,V0I.D,0I=VD1,=0I1AD9=A38A
4
2
0
--60 --40 --20 0 20 40 60 80 100 120 140 160
Case Temperature, Tc -- °C
IT15697
IS -- VSD
3
2
VGS=0V
100
7
Single pulse
5
3
2
10
75
3
2
1.0
7
5
3
2
0.1
75
3
2
0.01
7
5
3
2
0.001
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
10000
7
5
Diode Forward Voltage, VSD -- V IT15699
Ciss, Coss, Crss -- VDS
f=1MHz
Ciss
3
2
1000
7
5
3
2
Coss
Crss
100
7
0
10
20
30
40
50
60
Drain-to-Source Voltage, VDS -- V IT15701
ASO
5
3 IDP=225A (PW≤10μs)
2
100 ID=75A
7
5
3
2
10
7
5
Operation in
3
this area is
2
limited by RDS(on).
1001m0sm1sms
100_μs10^μs
1.0
7
5
3
2 Tc=25°C
0.1 ^{Single pulse}
0.1 ^{2 3 5 7} 1.0 ^{2 3 5 7} 10 ^{2 3}
Drain-to-Source Voltage, VDS -- V
5 7 ₁₀₀
IT15514
No. A1712-3/4