5HN01S Datasheet, PDF (3/4 Pages) Sanyo Semicon Device – Ultrahigh-Speed Switching Applications

5HN01S
100
RDS(on) -- ID
VGS=4V
7
5
3
2
10
Ta=75°C
7
--25°C
25°C
5
3
2
1.0
0.01
1.0
7
5
3
2
0.1
7
5
3
2
2
3
5 7 _0.1
Drain Current, ID -- A
yfs -- ID
2
3
IT00046
VDS=10V
Ta= ^--25°C
75^°C
25°C
0.01
0.01
2
1000
7
5
3
2
100
7
5
3
2
10
7
5
3
2
1.0
0.01
10
VDS=10V
9 _ID=0.1A
8
3
5 7 _0.1
Drain Current, ID -- A
SW Time -- ID
2
3
IT00048
VDD=25V
VGS=10V
td(off)
tf
tr
td(on)
2
3
5
Drain Current, ID -- A
VGS -- Qg
7
0.1
IT00050
7
6
5
4
3
2
1
0
0
0.3
0.6
0.9
1.2
1.5
Total Gate Charge, Qg -- nC
IT00052
RDS(on) -- Ta
14
12
10
8
6
I D=I3D0=m5A0,mVAG, ^VS=G4VS=10V
4
2
0
--60 --40 --20 0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C
IT00047
IF -- VSD
3
VGS=0
2
0.1
7
5
3
2
0.01
0.4
100
7
5
3
2
0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
Diode Forward Voltage, VSD -- V
IT00049
Ciss, Coss, Crss -- VDS
f=1MHz
10
7
5
3
2
1.0
7
5
3
2
0.1
0
0.20
Ciss
Coss
Crss
5 10 15 20 25 30 35 40 45 50
Drain-to-Source Voltage, VDS -- V IT00051
PD -- Ta
0.15
0.10
0.05
0
0
20
40
60
80 100 120 140 160
Ambient Temperature, Ta -- °C
IT02381
No.6682-3/4