3LN01N Datasheet, PDF (3/4 Pages) Sanyo Semicon Device – Ultrahigh-Speed Switching Applications

3LN01N
RDS(on) -- ID
RDS(on) -- ID
10
100
VGS=2.5V
7
VGS=1.5V
7
5
5
Ta=75°C
25°C
--25°C
3
2
3
2
10
Ta=75°C
7
5
--25°C
3
25°C
2
1.0
0.01
7
2
3
5 7 _0.1
2
3
5
Drain Current, ID -- A
IT00033
RDS(on) -- Ta
6
5
4
3
I DI=D4=08m0mA,AV, VGSG=S2=.54V.0V
2
1
0
--60 --40 --20 0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C
IT00035
IF -- VSD
1.0
7
VGS=0
5
3
2
0.1
7
5
3
2
1.0
0.001
1.0
7
5
3
2
0.1
7
5
3
2
0.01
0.01
1000
7
5
3
2
100
7
5
3
2
2
3
5 7 _0.01
2
3
5
Drain Current, ID -- A
IT00034
yfs -- ID
VDS=10V
Ta= ^--25°C
75^°C
25^°C
2
3
5 7 _0.1
2
3
5
Drain Current, ID -- A
IT00036
SW Time -- ID
VDD=15V
VGS=4V
td(off)
tf
tr
td(on)
0.01
0.5
100
7
5
3
2
0.6
0.7
0.8
0.9
1.0
1.1
1.2
Diode Forward Voltage, VSD -- V
IT00037
Ciss, Coss, Crss -- VDS
f=1MHz
10
Ciss
7
5
Coss
3
Crss
2
1.0
0
2
4
6
8 10 12 14 16 18 20
Drain-to-Source Voltage, VDS -- V IT00039
10
0.01
2
10
VDS=10V
9 _ID=150mA
8
3
5
7
0.1
Drain Current, ID -- A
VGS -- Qg
2
IT00038
7
6
5
4
3
2
1
0
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Total Gate Charge, Qg -- nC
IT00040
No.6544-3/4