2SK4094_12 Datasheet, PDF (3/5 Pages) Sanyo Semicon Device – N-Channel Silicon MOSFET General-Purpose Switching Device Applications

2SK4094
RDS(on) -- VGS
20
ID=50A
18
Single pulse
16
14
12
10
8
25°_C
6
Tc=75°_C
4
2
--25°C
0
1
2
3
4
5
6
7
8
Gate-to-Source Voltage, VGS -- V
| yfs | -- ID
3
2 ^VDS=10V
Single pulse
9 10
IT11558
100
7
5
25^°C
3
2
10
Tc= ^--25°C ₇₅^°C
7
5
3
2
1.0
7
0.1
3
2
1000
7
5
2 3 5 7 _1.0 2 3 5 7 ₁₀ 2 3 5 7 ₁₀₀
Drain Current, ID -- A
IT11434
SW Time -- ID
td(off)
VDD=30V
VGS=10V
tf
3
2
tr
100
td(on)
7
5
0.1 ^{2 3 5 7} 1.0 ^{2 3 5 7} 10 ^{2 3 5 7} 100
Drain Current, ID -- A
IT10473
VGS -- Qg
10
VDS=30V
9 _ID=100A
8
7
6
5
4
3
2
1
0
0
50
100
150
200
250
Total Gate Charge, Qg -- nC
IT10475
10
Single pulse
9
RDS(on) -- Tc
8
7
6
5
4
VVGGS=S=4V10, ^{IVD, =ID50=A50A}
3
2
1
0
--50 --25
0
25
50
75 100
Case Temperature, Tc -- °C
3
2 VGS=0V
100 Single pulse
7
5
IS -- VSD
3
2
125 150
IT11559
10
7
5
3
2
1.0
7
5
3
2
0.1
7
5
3
2
0.01
0
3
2
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Diode Forward Voltage, VSD -- V IT11435
Ciss, Coss, Crss -- VDS
f=1MHz
Ciss
10k
7
5
3
2
Coss
Crss
1k
7
5
0
5
10
15
20
25
30
Drain-to-Source Voltage, VDS -- V IT10474
ASO
1000
7
5
IDP=400A
3
2
ID=100A
100
7
5
3
DC _{o1p0e0rmat1sio0nms} ^1ms
≤101μ_{00sμs10μs}
2
10
7
Operation in
5
this area is
3
2
limited by RDS(on).
1.0
7
5
3 _Tc=25°C
2 _{Single pulse}
0.1
0.1 ^{2 3 5 7} 1.0
2 3 5 7 ₁₀
23
Drain-to-Source Voltage, VDS -- V
5 7 ₁₀₀
IT10960
No. A0523-3/5