2SK3979 Datasheet, PDF (3/4 Pages) Sanyo Semicon Device – N-Channel Silicon MOSFET General-Purpose Switching Device Applications

2SK3979
RDS(on) -- VGS
700
700
Ta=25°C
VDS=10V
600
600
RDS(on) -- Ta
500
500
400
400
I D=3A, ^{V GS=10V}
300
300
200
200
100
0
0 2 4 6 8 10 12 14 16 18 20
Gate-to-Source Voltage, VGS -- V
yfs -- ID
10
7 ^VDS=10V
22 24
IT10505
5
3
2
1.0
7
Ta=
--25^°C
75^°C
25^°C
5
3
2
0.1
0.01 ^{2 3 5 7} 0.1
2 3 5 7 _1.0
2 3 5 7 ₁₀
Drain Current, ID -- A
IT10507
SW Time -- ID
3
2
VDD=100V
VGS=10V
1000
7
5
3
2
100
td(off)
7
5
tf
3
2
td(on)
tr
10
7
5
0.01 ^{2 3 5 7} 0.1
2 3 5 7 _1.0
2 3 5 7 ₁₀
10
VDS=100V
9 _ID=6A
Drain Current, ID -- A
VGS -- Qg
IT10509
8
7
6
5
4
3
2
1
0
0 2 4 6 8 10 12 14 16 18 20
Total Gate Charge, Qg -- nC
IT10511
100
0
--60 --40 --20 0 20 40 60 80 100 120
Ambient Temperature, Ta -- °C
10
7 VGS=0V
5
IS -- VSD
140 160
IT10506
3
2
1.0
7
5
3
2
0.1
7
5
3
2
0.01
0.3
3
2
1000
7
5
0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
Diode Forward Voltage, VSD -- V IT10508
Ciss, Coss, Crss -- VDS
f=1MHz
Ciss
3
2
100
Coss
7
5
Crss
3
2
0
5
10
15
20
25
30
Drain-to-Source Voltage, VDS -- V IT10510
ASO
5
3
2
10
7
5
3
2
1.0
7
5
3
2
IDP=24A
ID=6A
1m1s ^{00≤µ1s0µs}
Operation
in
DC
this
operation1(0T0c1m=02sm5s_°C)
0.1
area is limited by RDS(on).
7
5
3
2
Tc=25°C
0.01 ^{Single pulse}
0.1 ^{2 3 5 7} 1.0
2 3 5 7 ₁₀
2 3 5 7 ₁₀₀ 2 3
Drain-to-Source Voltage, VDS -- V IT10512
No. A0263-3/4