VS912SL Datasheet, PDF (2/4 Pages) Sanyo Semicon Device – Low Capacitance TVS Diode Array Protection Device of High-speed Data Lines

VS912SL
Electrical Characteristics at Ta=25°C
Parameter
Reverse Working Voltage
Breakdown Voltage
Reverse Current
Clamping Voltage
Forward Clamping Voltage
Line Capacitance
Note :*3 Ipp according to IEC61000-4-5
Symbol
VRWM
V(BR)
IR
VCL
VFC
CT
Conditions
I(BR)=1mA, (I/O to GND)
VR=5.3V, (I/O to GND)
Ipp=1A, Tp=8/20μs, (I/O to GND) *3
Ipp=3A, Tp=8/20μs, (I/O to GND) *3
Ipp=1A, Tp=8/20μs, (GND to I/O) *3
Ipp=3A, Tp=8/20μs, (GND to I/O) *3
VR=0V, f=1MHz, (I/O to GND)
VR=0V, f=1MHz, (I/O to I/O)
Ratings
Unit
min
typ
max
5.3
V
6
V
50
nA
10
13
V
12
15
V
2
4
V
4
6
V
0.4
0.6
pF
0.2
0.3
pF
Package Dimensions
unit : mm (typ)
7065-001
2.3
98
76
12345
Pin 1 Marking Area
0.5
0.2
1
23 4 5
98
76
0.4
1 : I/O1
2 : I/O2
3 : GND
4 : I/O3
5 : I/O4
6 : NC
7 : NC
8 : NC
9 : NC
SANYO:TSLP-9-1
Electrical Connection
98
76
12 3 45
1 : I/O1
2 : I/O2
3 : GND
4 : I/O3
5 : I/O4
6 : NC
7 : NC
8 : NC
9 : NC
Top view
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