VS902SL Datasheet, PDF (2/3 Pages) Sanyo Semicon Device – Low Capacitance TVS Diode General Purpose Protection Device

VS902SL
Electrical Characteristics at Ta=25°C, unless otherwise specified
Parameter
Reverse Working Voltage
Symbol
VRWM
Breakdown Voltage
V(BR)
Reverse Current
IR
Clamping Voltage
VCL
Line Capacitance
CT
Note :*3 VESD according to IEC61000-4-2
Conditions
I(BR)=1mA, from pin1/2 to 3
I(BR)=1mA, from pin3 to 1/2
I(BR)=1mA, from pin1 to 2
VR=3V, between all pins
VESD=+15kV(contact), *3, from pin1/2 to 3
VESD=--15kV(contact), *3, from pin1/2 to 3
VR=0V, f=1MHz, from pin1/2 to 3
VR=0V, f=1MHz, from pin1 to 2, pin3 is not connected
Ratings
Unit
min
typ
max
--8
14
V
14.5
V
8.5
V
23
V
50
nA
26
V
20
V
4
7
pF
2
4
pF
Package Dimensions
unit : mm (typ)
7061-001
0.6
3
Electrical Connection
D1
1 _{1 : Cathode}
3
D2
2 : Cathode
2 3 : GND
Top view
12
Pin 1 Marking
0.35
0.15
0.15
1
2
3
0.5
1 : Cathode
2 : Cathode
3 : GND
SANYO : TSLP-3-1
Application Example
2 channels, bi-directional
2 protected signal lines, level up to
±8V (bi-directional) or +14V (uni-directional)
Connector
I/O
ESD
sensitive
I/O _device
12
3
IT13978
No. A1296-2/3