VS901SL Datasheet, PDF (2/3 Pages) Sanyo Semicon Device – Low Capacitance TVS Diode General Purpose Protection Device

VS901SL
Electrical Characteristics at Ta=25°C, unless otherwise specified
Parameter
Symbol
Reverse Working Voltage
VRWM
Breakdown Voltage
V(BR)
Reverse Current
IR
Clamping Voltage
VCL
Diode Capacitance
CT
Note :*3 Connect Pin1 to GND for 12V data line
*4 Ipp according to IEC61000-4-5
Conditions
from pin2 to 1
I(BR)=1mA, from pin2 to 1 *3
I(BR)=1mA, from pin1 to 2 *3
VR=3.3V
Ipp=1A, Tp=8/20μs, from pin2 to 1 *4
Ipp=1A, Tp=8/20μs, from pin1 to 2 *4
VR=0V, f=1MHz
Ratings
Unit
min
typ
max
--8
--14
V
14.5
17
20
V
8.5
11
14
V
50
nA
23
28
V
17
22
V
4
7
pF
Package Dimensions
unit : mm (typ)
7060-001
Electrical Connection
1 : GND
0.32
1
2 _{2 : Cathode}
2
Top view
1 _{Pin 1 Marking}
0.26
1
1 : Cathode
2 : GND
2
SANYO : TSSLP-2-1
Application Example
Protected data line with signal levels
--8V up to +14V (bi-directional)
ESD
Connector
I/O sensitive
device
2
1
IT13977
No. A1295-2/3