VEC2811 Datasheet, PDF (2/6 Pages) Sanyo Semicon Device – MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device

VEC2811
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
[MOSFET]
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
[SBD]
Reverse Voltage
Forward Voltage
Reverse Current
Interterminal Capacitance
Reverse Recovery Time
V(BR)DSS
IDSS
IGSS
VGS(off)
^yfs
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
VR
VF
IR
C
trr
ID=--1mA, VGS=0V
VDS=--30V, VGS=0V
VGS=±16V, VDS=0V
VDS=--10V, ID=--1mA
VDS=--10V, ID=--1.5A
ID=--1.5A, VGS=--10V
ID=--0.7A, VGS=--4V
VDS=--10V, f=1MHz
VDS=--10V, f=1MHz
VDS=--10V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
VDS=--10V, VGS=--10V, ID=--3A
VDS=--10V, VGS=--10V, ID=--3A
VDS=--10V, VGS=--10V, ID=--3A
IS=--3A, VGS=0V
IR=2mA
IF=2A
VR=15V
VR=10V, f=1MHz
IF=IR=100mA, See specified Test Circuit.
Ratings
Unit
min
typ
max
--30
--1.0
2.0
3.4
65
117
510
115
78
11
17
53
35
11
2.4
1.7
--0.87
V
--1 µA
±10 µA
--2.4
V
S
86 mΩ
168 mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
--1.2
V
30
V
0.4
0.45
V
1.25 mA
75
pF
20
ns
Package Dimensions
unit : mm
7012-004
0.3
0.15
8 7 65
1234
0.65
2.9
1 : Anode
2 : No Contact
3 : Source
4 : Gate
5 : Drain
6 : Drain
7 : Cathode
8 : Cathode
SANYO : VEC8
Electrical Connection
8
7
6
5
1
2
3
4
1 : Anode
2 : No Contact
3 : Source
4 : Gate
5 : Drain
6 : Drain
7 : Cathode
8 : Cathode
Top view
No.8287-2/6