TIG067SS Datasheet, PDF (2/9 Pages) Sanyo Semicon Device – Light-Controlling Flash Applications

TIG067SS
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
min
typ
max
Collector-to-Emitter Breakdown Voltage V(BR)CES IC=2mA, VGE=0V
400
V
Collector-to-Emitter Cutoff Current
ICES
VCE=320V, VGE=0V
10 μA
Gate-to-Emitter Leakage Current
IGES
VGE=±6V, VCE=0V
±10 μA
Gate-to-Emitter Threshold Voltage
VGE(off)
VCE=10V, IC=1mA
0.4
1.0
V
Collector-to-Emitter Saturation Voltage
Input Capacitance
VCE(sat)
Cies
IC=150A, VGE=4V
3.8
5100
5
V
pF
Output Capacitance
Reverse Transfer Capacitance
Coes
Cres
VCE=10V, f=1MHz
59
pF
43
pF
Fall Time
tf
IC=150A, VCC=320V, Resistor load VGE=4V, RG=36Ω
270
ns
Fig1 Large Current R Load Switching Circuit
RL
RG
CM +
VCC
TIG067SS
4V
0V
100kΩ
Note1. Gate Series Resistance RG ≥ 36Ω is recommended for protection purpose at the time of turn OFF. However,
if dv / dt ≤ 1500 / μs is satisfied at customer’s actual set evaluation, RG < 36Ω can also be used.
Note2. The collector voltage gradient dv / dt must be smaller than 1500V / μs to protect the device when it is turned off.
Ordering Information
Device
TIG067SS-TL-2W
Package
SOIC8
Shipping
2,500pcs./reel
memo
Pb Free and Halogen Free
No. A1067-2/9