TIG066SS Datasheet, PDF (2/6 Pages) Sanyo Semicon Device – Light-Controlling Flash Applications

TIG066SS
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
min
typ
max
Collector-to-Emitter Breakdown Voltage
Collector-to-Emitter Cutoff Current
Gate-to-Emitter Leakage Current
Gate-to-Emitter Threshold Voltage
Collector-to-Emitter Saturation Voltage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Fall Time
V(BR)CES
ICES
IGES
VGE(off)
VCE(sat)
Cies
Coes
Cres
tf
IC=2mA, VGE=0V
VCE=320V, VGE=0V
VGE=±6V, VCE=0V
VCE=10V, IC=1mA
IC=150A, VGE=4V
VCE=10V, f=1MHz
VCE=10V, f=1MHz
VCE=10V, f=1MHz
IC=150A, VCC=320V, Resistor load VGE=4V, RG=36Ω
400
0.4
3.8
5100
59
43
270
V
10 μA
±10 μA
1.0
V
5
V
pF
pF
pF
ns
Fig1 Large Current R Load Switching Circuit
RL
RG
CM +
VCC
TIG066SS
4V
0V
100kΩ
Note1. Gate Series Resistance RG ≥ 36Ω is recommended for protection purpose at the time of turn OFF. However,
if dv / dt ≤ 1500V / μs is satisfied at customer’s actual set evaluation, RG < 36Ω can also be used.
Note2. The collector voltage gradient dv / dt must be smaller than 1500V / μs to protect the device when it is turned off.
No. A1794-2/6