TIG065E8_12 Datasheet, PDF (2/8 Pages) Sanyo Semicon Device – N-Channel IGBT Light-Controlling Flash Applications

TIG065E8
Electrical Characteristics at Ta=25°C
Parameter
Collector-to-Emitter Breakdown Voltage
Collector-to-Emitter Cutoff Current
Gate-to-Emitter Leakage Current
Gate-to-Emitter Threshold Voltage
Collector-to-Emitter Saturation Voltage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Symbol
V(BR)CES
ICES
IGES
VGE(off)
VCE(sat)
Cies
Coes
Cres
Conditions
IC=2mA, VGE=0V
VCE=320V, VGE=0V
VGE=±4V, VCE=0V
VCE=10V, IC=1mA
IC=100A, VGE=2.5V
VCE=10V, f=1MHz
Fig.1 Large Current R Load Switching Circuit
Ratings
Unit
min
typ
max
400
V
10
μA
±10
μA
0.4
0.9
V
4.2
7
V
3100
pF
30
pF
23
pF
VGE
RL
RG
CM +
100kΩ
TIG065E8
VCC
Note1. The collector voltage gradient dv / dt must be smaller than 400V / μs to protect the device of gate-series
resistance RG when it is turned off.
Ordering Information
Device
TIG065E8-TL-H
Package
ECH8
Shipping
3,000pcs./reel
memo
Pb Free and Halogen Free
150
Tc=25°C
125
IC -- VCE
2.5V
100
1.8V
75
50
25
0
0 1 2 3 4 5 6 7 8 9 10
Collector-to-Emitter Voltage, VCE -- V IT16024
IC -- VGE
150
VCE=10V
125
100
75
50
25
0
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
Gate-to-Emitter Voltage, VGE -- V IT16025
No. A1862-2/8