TIG062E8 Datasheet, PDF (2/5 Pages) Sanyo Semicon Device – Light-Controlling Flash Applications

TIG062E8
Electrical Characteristics at Ta=25°C
Parameter
Collector-to-Emitter Breakdown Voltage
Collector-to-Emitter Cutoff Current
Gate-to-Emitter Leakage Current
Gate-to-Emitter Threshold Voltage
Collector-to-Emitter Saturation Voltage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Symbol
V(BR)CES
ICES
IGES
VGE(off)
VCE(sat)
Cies
Coes
Cres
Conditions
IC=2mA, VGE=0V
VCE=320V, VGE=0V
VGE=±6V, VCE=0V
VCE=10V, IC=1mA
IC=100A, VGE=3V
VCE=10V, f=1MHz
VCE=10V, f=1MHz
VCE=10V, f=1MHz
Ratings
Unit
min
typ
max
400
V
10
μA
±10
μA
0.4
0.9
V
5
8
V
2400
pF
32
pF
24
pF
Package Dimensions
unit : mm (typ)
7011A-004
Top View
2.9
8
5
0.15
0 t o 0.02
1
4
0.65
0.3
Electrical Connection
8
7
6
5
1
2
3
4
1 : Emitter
2 : Emitter
3 : Emitter
4 : Gate
5 : Collector
6 : Collector
7 : Collector
8 : Collector
Top view
Bot t om View
1 : Emitter
2 : Emitter
3 : Emitter
4 : Gate
5 : Collector
6 : Collector
7 : Collector
8 : Collector
SANYO : ECH8
Fig.1 Large Current R Load Switching Circuit
RL
RG
CM +
100kΩ
TIG062E8
VCC
Note1. Gate Series Resistance RG ≥ 250Ω is recommended for protection purpose at the time of turn OFF. However,
if dv / dt ≤ 400V / μs is satisfied at customer’s actual set evaluation, RG < 250Ω can also be used.
Note2. The collector voltage gradient dv / dt must be smaller than 400V / μs to protect the device when it is turned off.
No. A1480-2/5