TIG052TS Datasheet, PDF (2/5 Pages) Sanyo Semicon Device – N-Channel IGBT Light-Controlling Flash Applications

TIG052TS
Continued from preceding page.
Parameter
Gate-to-Emitter Threshold Voltage
Collector-to-Emitter Saturation Voltage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Symbol
VGE(off)
VCE(sat)
Cies
Coes
Cres
Conditions
VCE=10V, IC=1mA
IC=150A, VGE=2.5V
VCE=10V, f=1MHz
VCE=10V, f=1MHz
VCE=10V, f=1MHz
Ratings
Unit
min
typ
max
0.4
1.0
V
3.7
5.5
V
3800
pF
58
pF
47
pF
Package Dimensions
unit : mm (typ)
7006A-007
3.0
8
5
0.125
1
4
0.25
0.65
1 : Collector
2 : Collector
3 : Collector
4 : Collector
5 : Emitter
6 : Emitter
7 : Emitter
8 : Gate
SANYO : TSSOP8
Electrical Connection
8 765
1 234
1 : Collector
2 : Collector
3 : Collector
4 : Collector
5 : Emitter
6 : Emitter
7 : Emitter
8 : Gate
Top view
Fig.1 Large Current R Load Switching Circuit
2.5V
0V
RL
+
CM=400μF
RG
100kΩ
TIG052TS
VCC=320V
Note1. Gate Series Resistance RG≥82Ω is recommended for prolection purpose at the time of turn OFF. However,
if dv / dt≤400V / μs is satisfied at customer’s actual set evaluation, RG<82Ω can also be used.
Note2. The collector voltage gradient dv / dt must be smaller than 400V / μs to protect the device when it is turned off.
No. A1258-2/5