TIG032TS Datasheet, PDF (2/5 Pages) Sanyo Semicon Device – N-Channel IGBT Light-Controlling Flash Applications

TIG032TS
Continued from preceding page.
Parameter
Gate-to-Emitter Threshold Voltage
Collector-to-Emitter Saturation Voltage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Symbol
Conditions
VGE(off)
VCE(sat)1
VCE(sat)2
Cies
Coes
Cres
VCE=10V, IC=1mA
IC=150A, VGE=2.5V
IC=180A, VGE=4V
VCE=10V, f=1MHz
VCE=10V, f=1MHz
VCE=10V, f=1MHz
Ratings
Unit
min
typ
max
0.4
1.0
V
3.4
4.8
V
3.3
4.7
V
5100
pF
59
pF
43
pF
Package Dimensions
unit : mm (typ)
7006A-007
3.0
8
5
0.125
1
4
0.25
0.65
1 : Collector
2 : Collector
3 : Collector
4 : Collector
5 : Emitter
6 : Emitter
7 : Emitter
8 : Gate
SANYO : TSSOP8
Electrical Connection
8 765
1 234
1 : Collector
2 : Collector
3 : Collector
4 : Collector
5 : Emitter
6 : Emitter
7 : Emitter
8 : Gate
Top view
Large Current R Load Screening Circuit
RL=1.7Ω
RG=80Ω
+
CM=400µF
4.0V
0V
100kΩ
TIG032TS
VCC=325V
Note1. Gate Series Resistance RG≥47Ω is recommended for prolection purpose at the time of turn OFF. However,
if dv / dt≤400V / µs is satisfied at customer’s actual set evaluation, RG<47Ω can also be used.
Note2. The collector voltage gradient dv / dt must be smaller than 400V / µs to protect the device when it is turned off.
No. A0383-2/5