TF256 Datasheet, PDF (2/5 Pages) Sanyo Semicon Device – Electret Condenser Microphone Applications

TF256
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Rank
Ratings
min
typ
Unit
max
Gate-to-Drain Breakdown Voltage
Cutoff Voltage
V(BR)GDO
VGS(off)
IG=--100μA
VDS=2V, ID=1μA
--20
V
--0.1
--0.35
--1.0
V
3
100
180
Drain Current
IDSS
VDS=2V, VGS=0V
4
140
5
240
280
μA
450
Forward Transfer Admittance
| yfs |
VDS=2V, VGS=0V, f=1kHz
Input Capacitance
Ciss
VDS=2V, VGS=0V, f=1MHz
Reverse Transfer Capacitance
Crss
VDS=2V, VGS=0V, f=1MHz
[Ta=25°C, VCC=2.0V, RL=2.2kΩ, Cin=5pF, See specified Test Circuit.]
0.75
1.7
mS
3.1
pF
1.0
pF
3
1.0
Voltage Gain
GV
VIN=10mV, f=1kHz
4
2.0
dB
5
3.0
3
--0.5
--1.0
Reduced Voltage Characteristic
ΔGVV
VIN=10mV, f=1kHz, VCC=2.0V → 1.5V 4
5
--0.6
--0.9
--1.3
dB
--2.0
Frequency Characteristic
ΔGvf
f=1kHz to 110Hz
--1.0
dB
3
1.4
Total Harmonic Distortion
THD
VIN=30mV, f=1kHz
4
0.9
%
5
0.35
Output Noise Voltage
VNO
VIN=0V, A curve
--105
--100
dB
Test Circuit
Voltage gain
Frequency Characteristic
Distortion
Reduced Voltage Characteristic
2.2kΩ
5pF
33μF
+
VCC=2.0V
VCC=1.5V
OSC
VTVM V THD
ID -- VDS
400
350
VGS=0V
300
250
--0.05V
200
150
100
50
0
0
--0.10V
--0.15V
--0.20V
--0.25V
--0.30V
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
Drain-to-Source Voltage, VDS -- V IT15213
ID -- VGS
500
VDS=2V
450
400
350
300
250
200
150
100
150^μA
50
100^μA
0
--0.50 --0.45 --0.40 --0.35 --0.30 --0.25 --0.20 --0.15 --0.10 --0.05 0
Gate-to-Source Voltage, VGS -- V IT16271
No. A1616-2/5