TF202THC Datasheet, PDF (2/5 Pages) Sanyo Semicon Device – N-channel Silicon Juncton FET Electret Condenser Microphone Applications

TF202THC
Continued from preceding page.
Parameter
Symbol
Conditions
Drain Current
IDSS
VDS=5V, VGS=0V
Forward Transfer Admittance
| yfs |
VDS=5V, VGS=0V, f=1kHz
Input Capacitance
Ciss
VDS=5V, VGS=0V, f=1MHz
Reverse Transfer Capacitance
Crss
VDS=5V, VGS=0V, f=1MHz
[Ta=25°C, VCC=4.5V, RL=1kΩ, Cin=15pF, See specified Test Circuit.]
Voltage Gain
GV
VIN=10mV, f=1kHz
Reduced Voltage Characteristic
ΔGVV
VIN=10mV, f=1kHz, VCC=4.5V → 1.5V
Frequency Characteristic
ΔGvf
f=1kHz to 110Hz
Input Impedance
ZIN
f=1kHz
Output Impedance
ZO
f=1kHz
Total Harmonic Distortion
THD
VIN=30mV, f=1kHz
Output Noise Voltage
VNO
VIN=0V, A Curve
* : The TF202THC is classified by IDSS as follows : (unit : μA)
Marking
E4
E5
Rank
4
5
IDSS
140 to 240
210 to 350
Ratings
Unit
min
typ
max
140*
350*
μA
0.5
1.0
mS
3.5
pF
0.65
pF
--3.0
dB
--1.2
--3.5
dB
--1.0
dB
25
MΩ
1000
Ω
1.2
%
--110
dB
Package Dimensions
unit : mm (typ)
7031-001
Top View
1.4
0.25
3
12
0.1
0.2
0.45
Test Circuit
Voltage gain
Frequency Characteristic
Distortion
Reduced Voltage Characteristic
1kΩ
15pF
33μF
+
VCC=4.5V
VCC=1.5V
OSC
VTVM V THD _{B A}
Bottom View
1 : Drain
2 : Source
3 : Gate
SANYO : VTFP
Output Impedance
ID -- VDS
500
450
400
350
300
VGS=0V
250
200
--0.1V
150
100
--0.2V
50
--0.3V
--0.4V
--0.5V
0
0 1 2 3 4 5 6 7 8 9 10
Drain-to-Source Voltage, VDS -- V IT02310
ID -- VDS
500
450
400
350
300
VGS=0V
250
200
--0.1V
150
100
--0.2V
50
--0.3V
--0.4V
--0.5V
0
0
1
2
3
4
5
Drain-to-Source Voltage, VDS -- V IT03015
No.A1285-2/5