TF202B Datasheet, PDF (2/4 Pages) Sanyo Semicon Device – N-channel Silicon Junction FET Condenser Microphone Applications

Continued from preceding page.
Parameter
Frequency Characteristics
Input Resistance
Output Resistance
Total Harmonic Distortion
Output Noise Voltage
TF202B
Symbol
∆Gvf
ZIN
ZO
THD
VNO
Conditions
f=1kHz to 110Hz
f=1kHz
f=1kHz
VIN=30mV, f=1kHz
VIN=0V, A curve
Ratings
Unit
min
typ
max
--1.0
dB
25
MΩ
1000
Ω
1.0
%
--110
dB
Package Dimensions
unit : mm
7048-001
Top View
1.2
3
1
2
0.2
0.4
0.11
0 to 0.02
Test Circuit
Voltage gain
Frequency Characteristics
Distortion
Reduced Voltage Characteristics
1kΩ
15pF
33µF
+
VCC=4.5V
VCC=1.5V
OSC
VTVM V THD _{B A}
12
3
Bottom View
1 : Drain
2 : Source
3 : Gate
SANYO : TSSFP
ID -- VDS
500
450
400
350
300
VGS=0V
250
200
--0.1V
150
100
--0.2V
50
--0.3V
--0.4V
--0.5V
0
0 1 2 3 4 5 6 7 8 9 10
Drain-to-Source Voltage, VDS -- V IT02310
ID -- VGS
500
VDS=5V
450
400
350
300
250
200
150
100
50
0
--0.7
I DSS=325500^µµ_1A5A0µA
--0.6 --0.5 --0.4 --0.3 --0.2 --0.1
0
Gate-to-Source Voltage, VGS -- V IT02312
Output Impedance
ID -- VDS
500
450
400
350
300
VGS=0V
250
200
--0.1V
150
100
--0.2V
50
--0.3V
--0.4V
--0.5V
0
0
1
2
3
4
5
Drain-to-Source Voltage, VDS -- V IT03015
ID -- VGS
400
VDS=5V
360
320
280
240
200
160
120
80
40
0
--1.0 --0.9 --0.8 --0.7 --0.6 --0.5 --0.4 --0.3 --0.2 --0.1 --0
Gate-to-Source Voltage, VGS -- V IT02313
No. A0201-2/4