SD05T1_12 Datasheet, PDF (2/4 Pages) Sanyo Semicon Device – Transient Voltage Suppressor Diode SOD.323 Diodes for ESD Protection

SD05T1 Series
MAXIMUM RATINGS
Rating
Peak Power Dissipation @ 20 ms (Note 1)
@ T_L ≤ 25°C
IEC 61000−4−2 (ESD)
Symbol
P_pk
Air
Contact
Value
350
±15
±8.0
Unit
Watts
kV
IEC 61000−4−4 (EFT)
40
A
ESD Voltage (Human Body Model (HBM) Waveform per IEC 61000−4−2)
Total Power Dissipation on FR−5 Board (Note 2) @ T_A = 25°C
Derate above 25°C
V_PP
°P_D°
30
kV
200
°mW°
1.6
mW/°C
Thermal Resistance Junction−to−Ambient
R_qJA
635
°C/W
Junction and Storage Temperature Range
T_J, T_stg
−55 to +150
°C
Lead Solder Temperature − Maximum (10 Second Duration)
T_L
260
°C
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
*Other voltages may be available upon request.
1. Nonrepetitive current pulse, per Figure 6.
2. FR−5 = 1.0 x 0.75 x 0.62 in.
ELECTRICAL CHARACTERISTICS
(T_A = 25°C unless otherwise noted)
Symbol
Parameter
I_PP
V_C
V_RWM
I_R
V_BR
I_T
I_F
V_F
Maximum Reverse Peak Pulse Current
Clamping Voltage @ I_PP
Working Peak Reverse Voltage
Maximum Reverse Leakage Current @ V_RWM
Breakdown Voltage @ I_T
Test Current
Forward Current
Forward Voltage @ I_F
I
I_F
V_C V_BR V_RWM
II^{RT VF}
V
I_PP
Uni−Directional TVS
ELECTRICAL CHARACTERISTICS
Device
SD05T1, G
SD12T1, G
V_RWM
(V)
5.0
12
V_BR, Breakdown Voltage
(V)
V_C @ I_PP = 5 A
I_R @ V_RWM
I_T
(Note 3)
(mA)
Min
Max
mA
(V)
10
6.2
7.3
1.0
9.8
1.0
13.3
15.75
1.0
19
3. 8 × 20 ms pulse waveform.
Max I_PP
(Note 3)
(A)
24
15
V_C @ Max I_PP
(Note 3)
(V)
14.5
25
Max
Capacitance
(pF)
V_R = 0 V
f = 1.0 MHz
350
150
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