SBE817 Datasheet, PDF (2/4 Pages) Sanyo Semicon Device – Low IR Schottky Barrier Diode 15V, 2.0A Rectifier

SBE817
Electrical Characteristics at Ta=25°C
Parameter
Reverse Voltage
Forward Voltage
Reverse Current
Interterminal Capacitance
Reverse Recovery Time
Thermal Resistance
Symbol
VR
VF1
VF2
IR
C
trr
Rth(j-a)
Conditions
IR=0.3mA
IF=1.0A
IF=2.0A
VR=7.5V
VR=10V, f=1MHz
IF=IR=100mA, See specified Test Circuit.
When mounted on ceramic substrate (900mm²âœ•0.8mm)
min
15
Ratings
typ
0.45
0.52
35
65
max
0.5
0.57
6
10
Unit
V
V
V
μA
pF
ns
°C / W
Package Dimensions
unit : mm (typ)
7045-004
0.2
8
5
0.125
1
4
0.5
2.0
1 : Anode1
2 : NC
3 : Anode2
4 : Anode2(NC)
5 : Cathode2
6 : Cathode2
7 : Cathode1
8 : Cathode1
SANYO : EMH8
Electrical Connection
8765
1234
1 : Anode1
2 : NC
3 : Anode2
4 : Anode2(NC)
5 : Cathode2
6 : Cathode2
7 : Cathode1
8 : Cathode1
Top view
*: Terminal 4 is used for the purposes such as
test. Although it is connected to Anode 2,
please handle it as NC Terminal
trr Test Circuit
Duty≤10%
50Ω
100Ω
10Ω
10μs
--5V
3
2
1.0
7
5
3
2
0.1
7
5
3
2
0.01
7
5
3
2
0.001
0
IF -- VF
0.1
0.2
0.3
0.4
0.5
Forward Voltage, VF -- V
trr
0.6
0.7
IT14237
10000
1000
100
10
1.0
IR -- VR
Ta=125°C
100°C
75°C
50°C
25°C
0.1
0°C
0.01
0.001
--25°C
0.0001
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15
Reverse Voltage, VR -- V
IT14238
No. A0328-2/4